Study of characteristics of semiconductor GaAs nanoparticles prepared by laser ablation method
| dc.contributor.author | Atyaf S. Al Rawas1 , Enas G. Yonis2 and A. J.Jarjees Alsoofy3 | |
| dc.date.accessioned | 2026-07-19T06:56:23Z | |
| dc.date.issued | 2025 | |
| dc.identifier.citation | doi.org/10.15407/nnn.23.02.0515 | |
| dc.identifier.issn | 1816-5230 | |
| dc.identifier.uri | https://drcentrallibrary.uomosul.edu.iq/handle/123456789/7130 | |
| dc.language.iso | en | |
| dc.publisher | جامعة الموصل /University of Mosul | |
| dc.relation.ispartofseries | 169R | |
| dc.subject | Gallium arsenide GaAs | |
| dc.subject | Laser ablation | |
| dc.subject | Zeta potential | |
| dc.subject | optical properties of GaAs | |
| dc.title | Study of characteristics of semiconductor GaAs nanoparticles prepared by laser ablation method | |
| dc.type | Other |