Study of Characteristics of Semiconductor GaAs Nanoparticles Prepared by Laser Ablation Method

Abstract

Gallium arsenide GaAs nanoparticles are prepared in water using laser ablation method. The optical properties and energy gap of the colloidal solution are investigated using UV-visible spectrometer; the absorption peaks are observed between 200 and 300 nm wavelength, and the energy gap is calculated of about 1.86 eV. Zeta potential value is of about 22.18 mV that gives the impression of acceptable stability of the colloi-dal solution.